symbol 10 sec steady state v ds v gs 20 15 17 12 i dm i ar e ar 3.1 1.7 2.0 1.1 t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r jl 16 24 w 20 c/w r ja c -55 to 150 absolute maximum ratings t a =25c unless otherwise noted p d maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a units parameter t a =25c t a =70c v v i d gate-source voltage drain-source voltage 30 power dissipation a t a =25c junction and storage temperature range t a =70c repetitive avalanche energy l=0.3mh g mj 80 a 50 375 pulsed drain current b avalanche current g continuous drain current a AO4458 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 20a (v gs = 10v) r ds(on) < 4.6m ? (v gs = 10v) r ds(on) < 6.4m ? (v gs = 4.5v) general description the AO4458/l uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is esd protected and it is suitable for use as a load switch or in pwm applications. AO4458 and a o4458l are electrically identical. -rohs compliant -AO4458l is halogen free soic-8 g s s s d d d d g d s alpha & omega semiconductor, ltd. www.aosmd.com
AO4458 symbol min typ max units bv dss 30 v 1 t j = 55c 5 i gss 10 v gs(th) 1.0 1.7 3 v i d(on) 80 a 3.8 4.6 t j =125c 5.3 6.5 5.2 6.4 g fs 72 s v sd 0.69 1 v i s 3a c iss 5450 6800 pf c oss 760 pf c rss 540 pf r g 1 1.5 ? q g (10v) 84 112 nc q g (4.5v) 42 56 nc q gs 12 nc q gd 21 nc t d(on) 13 ns t r 9.8 ns t d(off) 49 ns t f 16 ns t rr 42 56 ns q rr 31 nc 0 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =10v, v ds =15v, i d =20a turn-off delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? turn-off fall time turn-on delaytime output capacitance turn-on rise time gate source charge gate drain charge total gate charge total gate charge m ? gate threshold voltage v ds = v gs i d = 250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a i dss r ds(on) v gs = 10v, i d = 20a reverse transfer capacitance i f =20a, di/dt=100a/ s static drain-source on-resistance diode forward voltage v gs = 4.5v, i d = 18a i s = 1a,v gs = 0v v ds = 5v, i d = 20a v gs =0v, v ds =15v, f=1mhz body diode reverse recovery time body diode reverse recovery charge forward transconductance switching parameters dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz i f =20a, di/dt=100a/ s input capacitance drain-source breakdown voltage on state drain current i d = 250 a, v gs = 0v v gs = 10v, v ds = 5v v ds = 30v, v gs = 0v v ds = 0v, v gs = 16v zero gate voltage drain current gate-body leakage current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev1: jan 2008 alpha & omega semiconductor, ltd. www.aosmd.com
AO4458 typical electrical and thermal characteristic s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 70 80 012345 v ds (volts) figure 1: on-region characteristics i d (a) 4v 4.5v 10v 3.5v 0 5 10 15 20 25 30 01234 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = 5v -40c 3 3.5 4 4.5 5 5.5 6 048121620 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs = 10v v gs = 4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 0 2 4 6 8 10 12 14 16 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d = 20a 25c 125c -40c v gs = 2.5v 3v v gs = 10v i d = 20a v gs = 4.5v i d = 18a alpha & omega semiconductor, ltd. www.aosmd.com
AO4458 typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 102030405060708090 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c i ss c oss c rss 1 10 100 1000 1e-04 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) r ds(on) limited t j(max) =150c t a =25c 100 s dc v ds = 15v i d = 20a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =59c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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